Infineon IRF7307TR: Dual N-Channel Power MOSFET for High-Efficiency Switching Applications

The demand for higher power density and improved energy efficiency in modern electronics continues to drive innovation in semiconductor technology. Addressing this need, the Infineon IRF7307TR stands out as a highly integrated dual N-channel power MOSFET, specifically engineered to optimize performance in a wide array of switching applications. This device combines two advanced MOSFETs in a single compact package, providing designers with a robust solution that saves board space and enhances system reliability.

Fabricated using Infineon’s proprietary advanced trench technology, the IRF7307TR achieves an exceptional balance between low on-state resistance (RDS(on)) and rapid switching characteristics. Each channel boasts a very low typical RDS(on) of just 45 mΩ at a gate voltage of 10 V, which directly translates to reduced conduction losses. This is paramount in power conversion stages, as minimized power loss leads to higher overall system efficiency and less thermal stress, reducing the need for extensive heat sinking.

Housed in a space-saving SO-8 package, the component is ideal for applications where PCB real estate is at a premium. The dual-die configuration is particularly advantageous for constructing synchronous rectification circuits in switch-mode power supplies (SMPS), DC-DC converters, and motor drive controllers. Its ability to handle continuous drain current up to 6.5 A per MOSFET and its high avalanche ruggedness ensure reliable operation under demanding conditions, including load fluctuations and transient voltage spikes.

Furthermore, the IRF7307TR features a low gate charge (Qg) and low internal capacitances, which are critical for achieving high-frequency switching. This allows for the design of smaller, more efficient power supplies with higher switching frequencies, enabling the use of smaller passive components like inductors and capacitors.

ICGOOODFIND: The Infineon IRF7307TR is a superior dual N-channel MOSFET that delivers high efficiency, thermal performance, and design integration, making it an excellent choice for modern power management challenges.

Keywords: Power MOSFET, Synchronous Rectification, High-Efficiency, DC-DC Converter, Low RDS(on)