Infineon DSL70E6327: High-Performance 650 V CoolMOS™ P7 Power Transistor

The Infineon DSL70E6327 represents a significant advancement in power semiconductor technology, leveraging Infineon’s cutting-edge CoolMOS™ P7 superjunction MOSFET platform. Designed for high-efficiency and high-power-density applications, this 650 V power transistor is engineered to meet the rigorous demands of modern switch-mode power supplies (SMPS), industrial drives, photovoltaic inverters, and EV charging systems.

At the core of the DSL70E6327’s performance is its exceptionally low specific on-resistance (RDS(on)), which minimizes conduction losses and enhances overall system efficiency. The device also features ultra-low gate charge (Qg) and reduced output capacitance (Coss), enabling faster switching speeds and lower switching losses. These characteristics make it particularly suitable for high-frequency operations, where thermal management and energy efficiency are critical.

Another standout attribute is its robustness and reliability under extreme conditions. The CoolMOS™ P7 technology incorporates advanced protection features, including high avalanche ruggedness and superior body diode performance, which contribute to extended operational lifespan and reduced failure rates in demanding environments.

Furthermore, the transistor’s optimized parasitic capacitance and improved reverse recovery behavior ensure smoother switching transitions, reducing electromagnetic interference (EMI) and simplifying filter design. This makes the DSL70E6327 an ideal choice for applications requiring compliance with stringent international efficiency standards, such as ErP lot 6 and 80 PLUS Titanium.

In summary, the Infineon DSL70E6327 sets a new benchmark for high-voltage power MOSFETs by combining minimal losses, superior switching performance, and exceptional durability.

ICGOOODFIND:

The Infineon DSL70E6327 CoolMOS™ P7 transistor is a top-tier solution for high-efficiency and high-frequency power applications, offering optimized performance, reliability, and ease of design integration.

Keywords:

CoolMOS™ P7, High Efficiency, Low RDS(on), 650 V MOSFET, Fast Switching