Infineon IPA65R190E6: A 650V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, Infineon Technologies introduces the IPA65R190E6, a 650V superjunction MOSFET from its esteemed CoolMOS™ family. This transistor is engineered to set a new benchmark in performance for demanding applications, including switch-mode power supplies (SMPS), server and telecom power systems, industrial motor drives, and photovoltaic inverters.

A key differentiator of the IPA65R190E6 is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 0.190 Ω and optimized gate charge, the device achieves an outstanding balance between conduction and switching losses. This translates directly into higher overall system efficiency, as less energy is wasted as heat during operation. For designers, this means the ability to create more compact power supplies with higher power output or to push the limits of efficiency in existing form factors.

The foundation of this performance is Infineon's advanced superjunction (SJ) technology. This technology allows the IPA65R190E6 to handle very high voltages while maintaining a low specific on-resistance, a combination that was historically difficult to achieve with standard silicon MOSFETs. The result is a robust and reliable switch capable of operating in harsh electrical environments common in industrial settings.

Furthermore, the transistor boasts excellent switching behavior and high dv/dt capability. Its fast switching speeds enable operation at higher frequencies, which allows for the use of smaller passive components like inductors and transformers. This is a critical advantage for increasing power density. The high dv/dt robustness ensures stable and predictable performance, minimizing the risk of erratic switching and electromagnetic interference (EMI) issues, which simplifies the design of compliant systems.

The IPA65R190E6 is also designed with ease of use in mind. It is offered in the industry-standard TO-220 full-pack package, providing a robust and familiar option for through-hole mounting. This package offers a good thermal path, enabling effective heat dissipation away from the silicon die, which is crucial for maintaining performance and reliability under high-load conditions.

ICGOOODFIND: The Infineon IPA65R190E6 stands out as a superior choice for engineers designing next-generation high-efficiency power systems. Its optimal blend of ultra-low on-resistance, fast switching, and high voltage robustness makes it an indispensable component for achieving new levels of performance and miniaturization in areas ranging from data center infrastructure to renewable energy.

Keywords: High Efficiency, Superjunction MOSFET, Low On-Resistance, Fast Switching, High Power Density