Optimizing Power Conversion Efficiency with the Infineon IPB65R095C7 CoolMOS™ Power Transistor

In the rapidly evolving landscape of power electronics, achieving higher efficiency and power density remains a critical objective for designers. The Infineon IPB65R095C7, a member of the CoolMOS™ C7 superjunction MOSFET family, stands out as a key enabler in this pursuit. Engineered with advanced technology, this power transistor significantly reduces energy losses, making it ideal for high-performance switched-mode power supplies (SMPS), telecom and server power systems, industrial drives, and renewable energy applications.

A primary factor behind its superior performance is the remarkably low on-state resistance (RDS(on)) of just 95 mΩ at maximum gate voltage. This characteristic directly minimizes conduction losses, allowing more energy to be delivered to the load rather than being dissipated as heat. Combined with an exceptionally low gate charge (Qg) and low output capacitance (Coss), the device achieves drastically reduced switching losses. This is particularly beneficial in high-frequency operations, where switching losses typically dominate total power dissipation.

The IPB65R095C7 also features integrated fast body diode, which enhances reliability in hard-switching and inductive load applications by improving reverse recovery performance. This reduces voltage spikes and electromagnetic interference (EMI), contributing to both system efficiency and stability. Furthermore, its high thermal cycling capability and robust design ensure long-term durability even under demanding operational conditions.

Designers can leverage these attributes to build more compact and efficient power systems without compromising on thermal performance. Whether used in PFC (Power Factor Correction) stages, DC-DC converters, or motor control circuits, this transistor facilitates higher switching frequencies. This, in turn, allows the use of smaller passive components like inductors and capacitors, leading to overall size reduction and cost savings.

In summary, the Infineon IPB65R095C7 CoolMOS™ offers a compelling blend of low conduction and switching losses, high reliability, and excellent thermal characteristics. It empowers engineers to push the boundaries of power conversion technology toward greater efficiency and power density.

ICGOODFIND: The Infineon IPB65R095C7 CoolMOS™ sets a high standard for power MOSFETs by substantially improving efficiency through reduced RDS(on) and switching losses, making it an optimal choice for next-generation power conversion systems.

Keywords:

Power Efficiency

Superjunction MOSFET

Switching Losses

RDS(on)

Thermal Performance