Infineon IPA80R750P7: A High-Performance Power MOSFET for Advanced Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in modern electronics places immense demands on power switching components. At the forefront of meeting these challenges is the Infineon IPA80R750P7, a state-of-the-art Power MOSFET engineered specifically for advanced switching applications. This device exemplifies the innovation in semiconductor technology, offering designers a superior solution for demanding power conversion tasks.
Built on Infineon's proprietary CoolMOS™ P7 superjunction technology, the IPA80R750P7 is designed to excel where it matters most. It is characterized by an exceptionally low on-state resistance (RDS(on)) of just 75 mΩ at a gate-source voltage of 10 V. This fundamental parameter is crucial, as it directly translates to reduced conduction losses. When the MOSFET is on, less power is wasted as heat, leading to significantly higher overall system efficiency. This makes it an ideal candidate for high-current applications.
Beyond its impressive RDS(on), this MOSFET is rated for 800 V drain-source voltage (VDS), providing a robust safety margin and enhanced durability in circuits prone to high-voltage spikes and transients, such as power factor correction (PFC) stages, switch-mode power supplies (SMPS), and motor drives. The high voltage rating ensures stable and reliable operation even under strenuous conditions.
A key highlight of the CoolMOS™ P7 series is its outstanding switching performance. The device features very low gate charge (Qg) and low effective output capacitance (Coss(eff)). These characteristics are paramount for high-frequency operation. By minimizing switching losses, the IPA80R750P7 allows power supply designers to push switching frequencies higher. This, in turn, enables the use of smaller passive components like inductors and transformers, directly contributing to increased power density and reduced system size and cost.
Furthermore, the component boasts a very fast intrinsic body diode, which enhances its robustness in hard-switching and bridge topology applications. This feature improves reliability and reduces the need for additional external protection circuitry. Its industry-standard TO-220 package ensures ease of handling and provides excellent thermal performance, facilitating effective heat dissipation.
ICGOOODFIND: The Infineon IPA80R750P7 stands as a benchmark for high-performance power switching. Its optimal blend of ultra-low RDS(on), high voltage capability, and exceptional switching characteristics makes it a top-tier choice for engineers aiming to maximize efficiency and power density in next-generation applications like server and telecom power supplies, industrial drives, and renewable energy systems.
Keywords: Power MOSFET, CoolMOS™ P7, High Efficiency, Switching Performance, Superjunction Technology.
