Infineon IPD95R2K0P7: A High-Performance 950V CoolMOS™ P7 Power Transistor

In the realm of high-power applications, efficiency, reliability, and thermal performance are paramount. The Infineon IPD95R2K0P7 stands out as a state-of-the-art 950V superjunction MOSFET from the renowned CoolMOS™ P7 series, engineered to meet the rigorous demands of modern power electronics. This device is specifically designed for applications such as server and telecom power supplies, industrial motor drives, solar inverters, and EV charging systems, where high voltage and low losses are critical.

At the heart of the IPD95R2K0P7 is its superjunction technology, which enables an exceptional balance between low on-state resistance (RDS(on)) and high switching performance. With a maximum RDS(on) of just 0.38 Ω at 25°C, this transistor minimizes conduction losses, leading to higher overall system efficiency. The 950V voltage rating provides a robust safety margin for operations in environments with high voltage spikes or fluctuations, enhancing system reliability in harsh conditions.

One of the standout features of the CoolMOS™ P7 family is its optimized switching behavior. The IPD95R2K0P7 exhibits low gate charge (QG) and low output capacitance (COSS), which reduces switching losses and allows for higher switching frequencies. This capability not only improves efficiency but also enables the design of smaller, more compact power supplies and converters by reducing the size of passive components.

Thermal management is another area where this device excels. The advanced package design ensures low thermal resistance, facilitating effective heat dissipation and allowing for higher power density without compromising longevity. This makes it ideal for space-constrained applications that require sustained high performance.

Moreover, the IPD95R2K0P7 is designed with enhanced robustness against avalanche and short-circuit events, providing an extra layer of protection in fault conditions. Its compliance with RoHS and REACH standards further underscores Infineon’s commitment to environmental sustainability.

ICGOOODFIND: The Infineon IPD95R2K0P7 CoolMOS™ P7 transistor sets a new benchmark for high-voltage power MOSFETs, delivering superior efficiency, thermal performance, and reliability for next-generation power systems.

Keywords:

High Voltage, Power Efficiency, Superjunction Technology, Thermal Performance, Switching Performance