Infineon IPB80N06S2L-09: Technical Specifications and Application Overview

The Infineon IPB80N06S2L-09 is a state-of-the-art N-channel power MOSFET engineered using advanced OptiMOS technology. This device is designed to deliver exceptional efficiency, high reliability, and robust performance in a compact D²PAK (TO-263) surface-mount package, making it a premier choice for demanding power management applications.

Technical Specifications

At its core, the IPB80N06S2L-09 is characterized by its low on-state resistance (R DS(on)) and high current handling capability. With a maximum drain-source voltage (V DS) of 60 V and a continuous drain current (I D) of 80 A at a case temperature of 100°C, it is built to handle significant power levels. Its standout feature is the exceptionally low typical R DS(on) of just 1.8 mΩ at 10 V gate drive, which is a key contributor to its high efficiency. This low resistance directly translates to reduced conduction losses, minimizing heat generation and improving overall system thermal performance.

The device is also defined by its low gate charge (Q G), which ensures fast switching speeds. This characteristic is crucial for high-frequency switching applications, as it reduces switching losses and allows for more compact magnetic component design. Furthermore, the MOSFET is qualified according to the highest automotive standards, featuring an AEC-Q101 qualification grade. This certifies its robustness and reliability for use in the harsh environments typical of automotive electronics.

Application Overview

The combination of high current capability, low R DS(on), and fast switching performance makes the IPB80N06S2L-09 exceptionally versatile. Its primary application domain is in the automotive industry, where it is extensively used in:

DC-DC Converters: Both for primary high-side/low-side switching in buck and boost converters within infotainment systems, advanced driver-assistance systems (ADAS), and power distribution units.

Motor Control: Driving various brushed DC motors found in power steering systems, fuel and water pumps, fan control, and window lift mechanisms.

Load Switching: Managing high-current loads such as solenoid valves, lighting systems, and heating elements with high efficiency.

Beyond automotive, this MOSFET is equally effective in industrial settings, including power supplies, battery management systems (BMS), and general purpose high-efficiency switching circuits. Its surface-mount package offers excellent power dissipation capabilities while saving valuable PCB space compared to through-hole alternatives.

ICGOOODFIND: The Infineon IPB80N06S2L-09 stands out as a high-performance, automotive-grade power MOSFET. Its optimal blend of ultra-low on-resistance, high current capacity, and proven reliability makes it an ideal solution for designers aiming to maximize efficiency and power density in modern automotive and industrial power systems.

Keywords: Power MOSFET, AEC-Q101, Low R DS(on), Automotive Applications, High-Efficiency Switching