Infineon IPD30N03S2L-20: A High-Performance 30V N-Channel MOSFET for Power Management Applications

Release date:2025-11-05 Number of clicks:187

Infineon IPD30N03S2L-20: A High-Performance 30V N-Channel MOSFET for Power Management Applications

In the realm of modern electronics, efficient power management is paramount. The Infineon IPD30N03S2L-20 stands out as a premier solution, a 30V N-channel MOSFET engineered to deliver exceptional performance, efficiency, and reliability in a wide array of demanding applications. This component is a critical enabler for systems where precise power control and minimal losses are non-negotiable.

A key strength of the IPD30N03S2L-20 lies in its exceptionally low on-state resistance (R DS(on)) of just 2.0 mΩ (max). This ultra-low resistance is fundamental to its high-efficiency operation, as it directly minimizes conduction losses when the device is fully switched on. The result is less power wasted as heat, leading to cooler running systems, reduced thermal management requirements, and ultimately, higher overall system efficiency.

Housed in a compact and robust SuperSO8 package, this MOSFET offers an ideal balance between high power density and ease of board-level integration. The advanced packaging technology allows for superior thermal performance, enabling the device to handle significant continuous drain current (I D) of up to 80 A. This makes it perfectly suited for space-constrained applications without compromising on power handling capabilities.

The device is optimized for low gate charge (Q G) and low switching losses, which is crucial for high-frequency switching operations. This characteristic allows for faster switching speeds, enabling designers to increase the frequency of their power conversion stages (such as DC-DC converters, motor drives, and load switches). Higher switching frequencies can lead to the use of smaller passive components like inductors and capacitors, further reducing the overall system size and cost.

Typical applications where the IPDON30N03S2L-20 excels include:

High-efficiency DC-DC converters in computing, networking, and telecom infrastructure.

Motor control and drive circuits for automotive systems, industrial automation, and robotics.

Active load switching and power distribution in server boards and battery management systems (BMS).

Synchronous rectification in switch-mode power supplies (SMPS).

ICGOOFind:The Infineon IPD30N03S2L-20 is a top-tier power MOSFET that sets a high standard for performance. Its combination of ultra-low R DS(on), high current capability, and excellent switching characteristics in a small form factor makes it an indispensable component for engineers designing next-generation power management solutions that demand maximum efficiency and reliability.

Keywords: Low RDS(on), Power MOSFET, High Efficiency, SuperSO8, Power Management.

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